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机译:高压氧退火对金属-氧化铝-氮化物-氧化物-硅-型闪存器件电性能的影响
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, #1 Oryong-dong, Buk-gu, Gwangju 500-712, Korea;
机译:高压氘氧化退火对金属-氧化铝-氮化物-氧化物-硅型闪存器件的阻挡效率和界面质量的影响
机译:Krf激光超短时间内退火对金属-氧化铝-氮化物-氧化物-硅型闪存器件的影响
机译:高压氘退火以改善氧化硅-氮化物-氧化物-硅非易失性存储器件的可靠性
机译:用于高级CMOS器件的氧退火ALD-ZRO_2 / SION栅极堆的结构和电气特性
机译:设计用于非易失性闪存设备的纳米晶体浮栅。
机译:H2高压退火对HfO2 / Al2O3 / In0.53Ga0.47As电容器的影响:化学成分和电特性
机译:形成气体退火对嵌入LaAlO3高k电介质中的Ge纳米晶体存储特性的影响
机译:在某些EpROm,EEpROm,闪存和闪存微控制器211半导体器件以及包含它的产品中。调查编号337-Ta-395