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Large-Area Growth of In-Plane Oriented (1120) ZnO Films by Linear Cathode Magnetron Sputtering

机译:线性阴极磁控溅射大面积生长面内取向(1120)ZnO薄膜

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摘要

(1120) Textured ZnO films are good candidates for shear-mode piezoelectric devices. In the previous deposition techniques of these films, there have been two problems related to their practical application. These problems are as follows: (i) highly oriented films can be obtained only in a small area and (ii) the crystallite c-axis of in the films is radially oriented in the substrate plane. To resolve these problems, the sputtering deposition technique using a linear cathode has been proposed. The in-plane and out-of-plane orientations of the films were quantitatively determined by pole figure analysis. As a result, we have demonstrated the formation of in-plane unidirectionally oriented (1120) ZnO films over the entire area of 4-in. silicon wafers.
机译:(1120)织构化的ZnO膜是剪切模式压电器件的良好候选者。在这些膜的先前沉积技术中,存在与它们的实际应用有关的两个问题。这些问题如下:(i)只能在小面积内获得高度取向的膜,并且(ii)膜中的微晶c轴在基材平面内径向取向。为了解决这些问题,已经提出了使用线性阴极的溅射沉积技术。通过极图分析定量地确定膜的面内和面外取向。结果,我们证明了在4英寸的整个区域内形成面内单向定向(1120)ZnO膜。硅晶片。

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  • 来源
    《Japanese journal of applied physics》 |2010年第7issue2期|P.07HD16.1-07HD16.4|共4页
  • 作者单位

    OMRON Corporation, Kizugawa, Kyoto 619-0283, Japan Faculty of Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan;

    rnNagoya Institute of Technology, Nagoya 466-8555, Japan;

    rnFaculty of Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan;

    rnFaculty of Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan;

    rnOMRON Corporation, Kizugawa, Kyoto 619-0283, Japan;

    rnOMRON Corporation, Kizugawa, Kyoto 619-0283, Japan;

    rnOMRON Corporation, Kizugawa, Kyoto 619-0283, Japan;

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