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Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film

机译:铜双大马士革互连在低k多孔膜上的直接化学机械抛光工艺

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摘要

To reduce the effective dielectric constant (k_(eff)) value for 32 nm node technology and beyond, the effects of a direct chemical mechanical polishing (CMP) process on porous low-k film without a protective cap layer were investigated. It was confirmed that a capless structure on porous low-k film is effective in reducing the resistance-capacitance (RC) products, but it causes degradation of wire-to-wire breakdown voltage characteristics. The most important point of a direct CMP process is to control the amount of damage to the polished surface. In this study, two types of low-k film were compared in combination with a variety of CMP process conditions. As results, we found that a direct CMP process has a positive effect on wire-to-wire current leakage and time-dependent dielectric breakdown (TDDB) reliability where a porous low-k film deposited by modified conditions is used. By optimizing the deposition and curing conditions, it is possible to control the distribution of different pore sizes in porous low-k film, which allows us to realize a highly reliable capless structure.
机译:为了降低32 nm节点技术及以后的有效介电常数(k_(eff))值,研究了直接化学机械抛光(CMP)工艺对无保护盖层的多孔低k膜的影响。已经证实,多孔低k膜上的无盖结构对于降低电阻-电容(RC)产物是有效的,但是其导致线对线击穿电压特性的劣化。直接CMP工艺最重要的一点是控制对抛光表面的损伤程度。在这项研究中,将两种低k膜与各种CMP工艺条件相结合进行了比较。结果,我们发现,直接的CMP工艺对线对线电流泄漏和时变电介质击穿(TDDB)可靠性具有积极影响,其中使用通过修改条件沉积的多孔低k膜。通过优化沉积和固化条件,可以控制多孔低k膜中不同孔径的分布,这使我们能够实现高度可靠的无盖结构。

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  • 来源
    《Japanese journal of applied physics》 |2010年第5issue3期|P.05FC02.1-05FC02.4|共4页
  • 作者单位

    Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

    rnRenesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan;

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