首页> 外国专利> Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers

Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers

机译:用于化学机械抛光具有图案化或未图案化的低k介电层的基材的水性抛光组合物和方法

摘要

An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.
机译:一种水性抛光组合物,其包含(A)磨料颗粒和(B)两亲性非离子表面活性剂,所述两性非离子表面活性剂选自具有(b1)疏水性基团的水溶性或水分散性表面活性剂,所述疏水性基团选自具有10至10个碳原子的支链烷基。 18个碳原子; (b2)亲水基团,该亲水基团选自包括以下各项的聚氧化烯基团:(b21)氧化乙烯单体单元和(b22)取代的氧化烯单体单元,其中取代基选自烷基,环烷基或芳基,烷基-环烷基,烷基-芳基,环烷基-芳基和烷基-环烷基-芳基,所述聚氧化烯基包含无规,交替,梯度和/或嵌段状分布的单体单元(b21)和(b22);使用所述水性抛光组合物的具有图案化或未图案化的低k或超低k介电层的基材的CMP方法;所述水性抛光组合物在制造电气,机械和光学装置中的用途。

著录项

  • 公开/公告号IL225744A

    专利类型

  • 公开/公告日2018-01-31

    原文格式PDF

  • 申请/专利权人 BASF SE;

    申请/专利号IL20130225744

  • 发明设计人

    申请日2013-04-14

  • 分类号C09G;

  • 国家 IL

  • 入库时间 2022-08-21 12:52:32

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