Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

摘要

In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethyl-amino)titanium (TDMAT) precursor for metal-gate electrodes of planar metal-oxide-semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the AID TiN was significantly reduced by NH_3 post deposition annealing (PDA). The electrical characteristics of the AID-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the AID-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explalned by the lower interface trap density (D_(it)) of the AID TiN/SiO_2 gate stack.