Methods of preparing titanium containing thin films by atomic layer deposition using monocyclopentadienyl titanium-based precursors

摘要

Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (I) wherein: R is C₁-C₆-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C₁-C₆-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C₁-C₆-alkyl.