Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal-Oxide-Semiconductor Field-Effect Transistors Using Measured S-Parameters

摘要

An improved RF method based on the slope extraction of the total drain-source resistance and total gate charge versus mask gate length from measured S-parameters is presented to extract the effective channel mobility of bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) from 27 to 250℃. An improved temperature-dependent channel mobility equation is also used to eliminate the high-temperature modeling errors in the conventional equation. Much better agreement with measured electron mobility data from 27 to 250 ℃ is achieved by using the improved equation rather than the conventional one, verifying the accuracy of the improved equation.