Direct Current and Microwave Characteristics of Sub-micron AIGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

摘要

We report for the first time the DC and microwave characteristics of sub-micron gate (～0.3μm) AIGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AIGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853mA/mm and a maximum extrinsic transconductance of 180mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AIGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications.