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首页> 外文期刊>Japanese journal of applied physics >Sub-Micron-Accurac Gold-to-Gold Interconnection Flip-Chip Bonding Approach for Electronics-Optics Heterogeneous Integration
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Sub-Micron-Accurac Gold-to-Gold Interconnection Flip-Chip Bonding Approach for Electronics-Optics Heterogeneous Integration

机译:亚微米Accurac金对金互连倒装芯片键合方法,用于电子-光学异构集成

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摘要

High-precision integration has valuable meaning in heterogeneous convergent technology. In this paper we report on a new high-precision low-temperature bonding approach, capable of submicron alignment accuracy, based on the conventional ultrasonic flip-chip bonding technique and modified metal pad and bump elements. The interconnection pair made from a conductive-sloped hollow bonding pad (concave) and metal cone bump (convex) elements, i.e., misalignment self-correction elements, helps in aligning and maintaining the alignment between the chip and the substrate during stacking. By this method, the stacking accuracy can be improved significantly and effectively. Repeatable submicron (i.e., less than 500 nm) bonding accuracies are confirmed through experimental investigation. Moreover, reliable bond characteristics including electrical and mechanical properties are observed, validating the performance of the bonding approach. With these results, the proposed high-precision low-temperature bonding approach shows its suitability for heterogeneous electronics-optics integration applications.
机译:高精度集成在异构融合技术中具有重要的意义。在本文中,我们报告了一种基于常规超声倒装芯片键合技术以及改进的金属焊盘和凸块元素的,能够实现亚微米对准精度的新型高精度低温键合方法。由导电倾斜的中空焊盘(凹面)和金属锥形凸块(凸面)元件(即未对准的自校正元件)制成的互连对有助于在堆叠过程中对准并保持芯片和基板之间的对准。通过这种方法,可以显着且有效地提高堆叠精度。通过实验研究证实了可重复的亚微米(即小于500 nm)键合精度。此外,观察到了可靠的粘结特性,包括电气和机械性能,从而验证了粘结方法的性能。通过这些结果,所提出的高精度低温键合方法显示了其适用于异构电子光学集成应用的适用性。

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  • 来源
    《Japanese journal of applied physics》 |2013年第4issue2期|04CB08.1-04CB08.7|共7页
  • 作者单位

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8568, Japan,Institute of Photonics-Electronics Convergence System Technology (PECST), AIST, Tsukuba, Ibaraki 305-8568, Japan;

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8568, Japan,Institute of Photonics-Electronics Convergence System Technology (PECST), AIST, Tsukuba, Ibaraki 305-8568, Japan;

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8568, Japan;

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8568, Japan;

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8568, Japan;

    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba, Ibaraki 305-8568, Japan,Institute of Photonics-Electronics Convergence System Technology (PECST), AIST, Tsukuba, Ibaraki 305-8568, Japan;

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