Leakage current analysis of diamond Schottky barrier diodes operated at high temperature

摘要

Diamond is a promising material for use in high-power semiconductor devices that are operated under high-temperature conditions. A Schottky barrier diode (S6D) fabricated by using high-quality diamond shows a low reverse leakage current of less than 10~(-7) A/cm~2 in a reverse electrical field of 1.5 MV/cm at room temperature. The leakage current of this diamond SBD is found to be low even at an elevated temperature of 415 K. The leakage current of this diamond SBD is 2-4 orders of magnitude lower than that of a SiC SBD owing to the larger barrier height. The leakage characteristics of the diamond SBD are modeled using the thermionic-field emission model, which well agrees with experimental results.