Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiN X field plate structure

摘要

Diamond vertical Schottky barrier diodes (SBDs) with SiNXfield-plate (FP) structure has been investigated. Ti/Au and Zr/Ni/Au metal stacks are used as ohmic and Schottky metal, respectively. The forward current density of SBDs with and without FP are 1600 and 3300 A/cm2at ?10?V, respectively. The depletion layer’s thickness and net doping concentration are 380?nm and 1.4?×?1016cm?3, respectively, as extracted from the capacitance-voltage measurement. The reverse leakage current of SBDs with and without FP are 1.8?×?10?6and 6.3 A/cm2at 100?V, respectively, indicating that the FP technique can significantly suppress reverse leakage current at the Schottky junction edge.