Method and apparatus for reduction of reverse leakage current in schottky barrier diode

摘要

ABSTRACT According to an aspect of the present invention, a method of fabricating a Schottky Barrier Diode comprising growing n-type GaN layer on the sapphire substrate, cleaning said n-type GaN grown on the sapphire substrate, depositing Silicon dioxide (SiO2) on the cleaned n-type GaN, forming a window for ohmic contact films and Schottky metal, depositing semi-insulating polycrystalline silicon (SIPOS) and opening window on SIPOS for ohmic contact films and Schottky metal. In one embodiment, the thickness of GaN layer is 5µm. In second embodiment, the thickness of silicon dioxide dielectric deposit is 0.2µm. In third embodiment, the thickness of SIPOS layer is 0.24µm. In another aspect of the present invention, SiO_2and SIPOS layers deposited on the field plate act complementary to each other to reduce the electric field and offer high resistance to the current when diode is reverse biased.