β-Ga_2O_3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV~2/R_(on,sp) value of 0.93 GW/cm~2

摘要

In this paper, we show that high-performance β-Ga_2O_3 hetero-junction barrier Schottky (HJBS) diodes with various β-Ga_2O_3 periodic fin widths of 1.5/3/5 μm are demonstrated with the incorporation of p-type NiO_x. The β-Ga_2O_3 HJBS diode achieves a low specific on-resistance (R_(on,sp) of 1.94 mΩ cm~2 with a breakdown voltage of 1.34 kV at a β-Ga_2O_3 periodic fin width of 3 μm, translating to a direct-current Baliga's power figure of merit (PFOM) of 0.93 GW/cm~2. In addition, we find that by shrinking the β-Ga_2O_3 width, the reverse leakage current is minimized due to the enhanced sidewall depletion effect from p-type NiO_x. β-Ga_2O_3 HJBS diodes with p-type NiO_x turn out to be an effective route for Ga_2O_3 power device technology by considering the high PFOM while maintaining a suppressed reverse leakage current.