机译:通过高敏感发射显微镜观察到的边缘定义的薄膜喂养生长(001)β-GA_2O_3肖特基势垒二极管的反向漏电流路径的起源
Department of Electrical and Electronic Engineering Saga University Saga 840-8505 Japan;
Novel Crystal Technology Inc. Sayama Saitama 350-1328 Japan;
TDK Corporation Ichikawa 272-8558 Japan;
TDK Corporation Ichikawa 272-8558 Japan;
Novel Crystal Technology Inc. Sayama Saitama 350-1328 Japan;
Department of Electrical and Electronic Engineering Saga University Saga 840-8505 Japan;
Department of Electrical and Electronic Engineering Saga University Saga 840-8505 Japan;
机译:多晶缺陷 - 漏电流卤化物卤化物阶段外延(001)β-GA_2O_3肖特基势垒二极管通过超高敏感发射显微镜和同步X射线形貌鉴定
机译:边定膜法生长高迁移率β-Ga_2O_3(201)单晶及其镍接触肖特基势垒二极管
机译:堆叠故障:卤化物气相外延(001)β-GA_2O_3肖特基势垒二极管漏电流的起源
机译:Ni / Ga
机译:利用弹道电子发射显微镜和弹道空穴发射显微镜测量Cu / si(001),ag / si(001)和au / si(001)界面的肖特基势垒高度