Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ Ron,sp of up to 0.95 GW/cm2

摘要

We report the realization of field-plated vertical Ga2O3 trench Schottky barrier diodes (SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With employment of field plate, a breakdown voltage (BV) of 2.89 kV is achieved, which is similar to 500 V higher than those without field plate. Trench sidewall depletion is observed, and the average depletion width is extracted using an analytical model. The trench SBDs have a differential specific on-resistance(R-on,R-sp) of 10.5 (8.8) m Omega.cm(2) from DC (pulsed) measurements, which leads to a Baliga's figure-of-merit (BV2/R-on,R-sp) of 0.80 (0.95) GW/cm(2) - the highest among Ga2O3 power devices to date.