Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

摘要

We report the etching properties of tripodal paraffinic triptycene (TripC(12)) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl-2 plasma etching. Using thermally nanoimprinted TripC(12) films, we achieved microfabrication of a GaAs substrate by Cl-2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR- FTIR) spectroscopy confirmed that the chemical structure of TripC(12) remains intact after the ICP etching process using Cl-2. We believe that TNIL using TripC(12) films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs). (C) 2016 The Japan Society of Applied Physics