GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N_2 plasma-activated bonding

摘要

III-V/Si hybrid integration with direct bonding is an attractive method of realizing an electrophotonic convergence router with a small size and a low power consumption. Plasma-activated bonding (PAB) is an effective approach for reducing thermal stress during the bonding process because PAB achieves a high bonding strength with low-temperature annealing. This time, the fabrication of a GaInAsP/silicon-on-insulator (SOI) hybrid laser with Si ring-resonator-type reflectors was demonstrated by N-2 PAB. By measuring the lasing spectra, we confirmed the reflective characteristics resulting from the cascaded Si ring resonators. We also investigated kink characteristics, which occur around the threshold current, of the current-light output (I-L) characteristics, and successfully approximated the kink characteristics by considering saturable absorption occurring at the III-V/Si taper tip. The taper structure was investigated in terms of a passive device as well as an active device, and a structure for eliminating saturable absorption was proposed. (C) 2016 The Japan Society of Applied Physics