RF power FinFET transistors with a wide drain-extended fin

摘要

Drain-extended FinFET transistors for RF power applications have been fabricated and is presented in this paper. Power FinFETs with a wide drain extension are proposed to reduce the drain resistance. Compared with conventional drain-extended FinFETs, our proposed new devices exhibit lower on-resistances and better high-frequency performances while keeping a similar breakdown voltage. The enhancements of the on-resistance and peak cutoff frequency are 16 and 56%, respectively, under an optimal drain-extension layout. These experimental results suggest that FinFET transistors with a wide drain extension could be used for RF power applications, increasing the possibility of integrating RF power parts into future FinFET system-on-a-chip technologies. (C) 2017 The Japan Society of Applied Physics