Numerical analysis of direct current circuits containing bipolar and metal oxide semiconductor transistors

摘要

The paper brings a numerical method for finding multiple DC operating points of circuits containing bipolar and metal oxide semiconductor (MOS) transistors fabricated in micrometer technology. The method is based on the concept of separable Newton homotopy and division of the searching space into currently changed rectangles (boxes). The method traces a piecewise-linear homotopy path and intersects some specific plane at the points corresponding to the operating points. Numerical experiments show that the method is remarkably efficient. Three examples including bipolar junction transistors and metal oxide semiconductor circuits are given. Copyright © 2014 John Wiley & Sons, Ltd.