首页> 外国专利> High voltage transistor i.e. metal oxide semiconductor transistor, control device i.e. driver, for vehicle, has transistor whose grid is connected to terminal by bipolar transistor arranged on base arrangement and controlled by current

High voltage transistor i.e. metal oxide semiconductor transistor, control device i.e. driver, for vehicle, has transistor whose grid is connected to terminal by bipolar transistor arranged on base arrangement and controlled by current

机译:高压晶体管,即金属氧化物半导体晶体管,用于车辆的控制装置,即驱动器,具有其栅极通过布置在基本布置上的双极晶体管连接到端子并受电流控制的晶体管。

摘要

The device has an output terminal (OUT) delivering a control signal of a high voltage transistor (MHT) i.e. metal oxide semiconductor transistor. A positive metal oxide semiconductor control transistor (Q5) is connected between a positive supply terminal (VDD) and the output terminal. A negative metal oxide semiconductor control transistor (Q6) is connected between a negative supply terminal (VDD-n) and the output terminal. A grid of the transistor (Q6) is connected to an input terminal by a bipolar transistor (Q9) arranged on a common base arrangement and controlled by current on its emitter.
机译:该设备具有输出端子(OUT),该输出端子(OUT)传递高压晶体管(MHT)即金属氧化物半导体晶体管的控制信号。正金属氧化物半导体控制晶体管(Q5)连接在正电源端子(VDD)和输出端子之间。负金属氧化物半导体控制晶体管(Q6)连接在负电源端子(VDD-n)和输出端子之间。晶体管(Q6)的栅极通过布置在公共基极布置上并由其发射极上的电流控制的双极晶体管(Q9)连接到输入端子。

著录项

  • 公开/公告号FR2920613A1

    专利类型

  • 公开/公告日2009-03-06

    原文格式PDF

  • 申请/专利权人 RENAULT SAS SOCIETE PAR ACTIONS SIMPLIFIEE;

    申请/专利号FR20070006095

  • 发明设计人 BARROSO PAULO;AGNERAY ANDRE;

    申请日2007-08-30

  • 分类号H03K17/0412;B60H1/32;F01N3/023;F02P3;H01T13;

  • 国家 FR

  • 入库时间 2022-08-21 19:07:19

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