Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit (Invited)

摘要

Indium phosphide (InP)-based transistors play an important role in high-speed circuit and high-frequency analog circuit applications. Over the past few decades, terahertz heterojunction bipolar transistor (HBT) is increasingly developed. As a result, many reports of HBTs operating at terahertz region have flourished. Since the high-frequency circuit design faces the challenge from the lack of precise transistor models, this paper reviews the development of high-frequency modeling technologies of InP HBT at terahertz region. Processes in the development of small-signal models at terahertz frequencies, precise parasitic parameters extraction method, improvements in measurement, and the de-embedding technologies open up more opportunities for precise representation of InP HBTs. Finally, some excellent terahertz circuits based on InP HBT are reviewed.