机译:射频磁控溅射Zn-In金属前驱体硒化制备的ZnIn_2Se_4电极的光电化学研究
Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hma 1st Rd., Kwei-Shan,Taoyuan 333, Taiwan;
Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hma 1st Rd., Kwei-Shan,Taoyuan 333, Taiwan;
Department of Chemical and Materials Engineering, Chang Gung University, 259 Wen-Hma 1st Rd., Kwei-Shan,Taoyuan 333, Taiwan;
hydrogen production; photoelectrode; ZnIn_2Se_4; magnetron sputtering;
机译:利用射频磁控溅射的Ag-In金属前驱体硒化制备三元AgInSe_2薄膜电极,用于光电化学
机译:使用热蒸发的Ag-Sn金属前体硒化的立方Agsnse2薄膜电极的光电化学性能
机译:用AgIn金属前驱体硫化制备的AgInS2薄膜电极的光电化学性能
机译:磁控溅射太阳能电池前驱体硒化生长Cu2ZnSnSe4薄膜
机译:用于互连金属化的高功率脉冲磁控溅射和调制脉冲功率溅射的比较。
机译:磁控溅射参数和W膜前驱体的应力状态对快速硒化对WSe2层织构的影响
机译:快速硒化磁控溅射参数和胶片前体应力状态对WSE2层纹理的影响