Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells

摘要

Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78 % for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3 %.