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Photoelectrochemical performances of the cubic AgSnSe2 thin film electrodes created using the selenization of thermal evaporated Ag-Sn metal precursors

机译:使用热蒸发的Ag-Sn金属前体硒化的立方Agsnse2薄膜电极的光电化学性能

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In this study, we prepared the cubic AgSnSe2 thin film photoelectrodes on substrates using the selenization of Ag-Sn metal precursors and examined the influence of silver content in samples on their photoelectrochemical properties in the aqueous solution. With the selenization temperature kept at 410 degrees C for 1 h in the selenization apparatus, the cubic AgSnSe2 samples can be obtained. The results of phase characterization show that the phase change from the cubic AgSnSe2 to the cubic Ag8SnSe6 phase takes place at the selenization temperature between 425 to 440 degrees C. The optical energy band gaps, carrier concentrations, and mobilities of samples are in the range of 1.24-1.30 eV, 1.75 x 10(18) -4.68 x 10(19) cm(-3), and 43-253 cm(2)/V/s, respectively. It was found that the sample with the [Agy[Ag+Sn] molar ratio of 0.48 had a maximum photo-enhancement current density of 1.26 mA/cm(2) at an external bias of +1.23 V vs. the reverse hydrogen electrode in the 0.35M Na2S +0.25 M K2SO3 aqueous solution. The electrochemical impedance spectra of samples in the aqueous solution containing S2- and SO32- ions were also employed to examine the possible reaction mechanisms taking place at the sample surfaces. (C) 2017 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
机译:在这项研究中,我们使用Ag-Sn金属前体的硒化制备在基材上的立方Agsnse2薄膜光电子,并检查了在水溶液中的样品中银含量对其光电化学性质的影响。通过在硒化装置中保持在410℃的硒化温度,可以获得立方体AgsnSe2样品。相表征的结果表明,从立方Agsnse2到立方Ag8SnSe6相的相变在425至440℃之间的硒化温度下进行。光能带隙,载流子浓度和样品的迁移率在1.24-1.30EV,1.75×10(18)-4.68×10(19)厘米(-3)和43-253cm(2)/ v / s。发现具有0.48的[Ag + Sn]摩尔比的样品在+1.23V与反向氢电极的外部偏压下具有1.26mA / cm(2)的最大光学增强电流密度。 0.35M Na 2 S + 0.25M K 2 SO 3水溶液。还采用含有S2-和SO 3 2的水溶液中样品的电化学阻抗光谱,以检查在样品表面上发生的可能反应机制。 (c)2017台湾化工工程师研究所。 elsevier b.v出版。保留所有权利。

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