The advanced evaporator for the liquefied precursor, and evaporation of the plural liquefied precursors in thin film evaporating of the semiconductor

摘要

For thin film formation, and, the precipitation chamber in order to precipitate the membrane on the semiconductor surface (26, 84 and 130) evaporation system in order to introduce the steam (50 and 92, 92a and 92b, 180) being, the liquefied precursor where the evaporation chamber (52, 116 and 192) it possesses this system, two which is carried in the gas stream differs at least in the evaporation chamber and becomes independent (54A, 54B, 54C, 110A and 110B, 186) is offered selectively. The gas stream, gas resource (12, 62A, 62B, 62C, 98A and 98B, 184) from the single carrier gas, or one which inside the plural carrier gases is selected. Case it is easy to receive thermal decomposition with the contact with the hot surface the liquid which it tries to introduce, the evaporation chamber (52, 116 and 192) the atomizer (94, 142A, 142B, 154A and 154B, 182) using with the entrance, the evaporation chamber (52, 116 and 192) simultaneous or gas resource 12 in order to introduce continually, 1 kinds from 62A, 62B, 62C, 98A and 98B or from the individual carrier gas which is more than that, the evaporation chamber (52, 116 and 192) it offers the aerosol. The evaporation chamber (52, 116 and 192), in order for complete evaporation to become secure the gas/steam blend which it evaporates the evaporation chamber (52,116,192) from before coming out, the passage which is heated (198, 124, 202 and 212) by installing the recycling gas flow which it passes, it is possible to design.