Efficiency optimization of the structure pin-InGaN/GaN and quantum well-InGaN for solar cells

摘要

In this aim, we were interested in the optimization and simulation of pin-In1-xGaxN structure and InGaN multi quantum well structures for photovoltaic applications. This ternary alloy which is an III-V semiconductor presents important characteristics especially its gap energy, thus, the increase of the photons absorption of wavelengths. It has been shown that the increase in indium concentration increases the current density J(sc) and the maximum output power. In return, the V-oc decreases consequently. For In0.50Ga0.50N structure we observed that the current density and the maximum power are respectively around 19.50 mA/cm(2) and 27.50 mW/cm(2) with a ratio of 21.65 mA/cm(2). Also it is shown that the incorporation of the quantum well in the active region results in an increase of J(sc) and P-max but V-oc remains unchanged. The incorporation of 50 quantum well structure in the In0.50Ga0.50N gives 22 mA/cm(2) of the current density and 32 mW/cm(2) of the maximum output power. The use of the structure based on In0.50Ga0.50N (MQW) induces an efficiency of 32%. We deduced that the relative efficiency is improved by 10.9%. (C) 2016 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.