A New Measurement Circuit to Evaluate Current Collapse Effect of GaN HEMTs Under Practical Conditions

摘要

The gallium nitride transistors suffer from current collapse effect in operation regions, which leads the dynamic ON-resistance to increase when high voltage is applied to the transistor. Dynamic ON-resistance under practical application conditions is also an important factor for the reliability and conduction efficiency of transistors. To measure the dynamic ON-resistance and evaluate the current collapse effect, a softswitching circuit based on synchronous buck topology is proposed in this paper. To apply high-voltage and high-current stresses to the device without additional spikes and oscillation, resonance technique has been employed. As a result, the proposed circuit could produce sufficient power stresses to the devices with general equipment. To achieve accurate measurement of ON-resistance under switching operations and eliminate the saturation of oscilloscope probes, an active voltage clamp circuit is developed. Operation principles and design analysis of the circuit are described in this paper. The dynamic ON-resistance measurement method is illustrated in detail. Furthermore, a prototype circuit has been built. A simulation and experiments were carried out to verify the performance of the system. A comparison of the active clamp circuit with common voltage probes is presented through the measurement results. The experimental results confirm that dynamic ON-resistance can be accurately measured using the proposed circuit and the current collapse effect can be evaluated under practical operation conditions with high precision.