Verification of on-wafer noise parameter measurements

摘要

Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth.