Ultra-Low Noise HEMT Device Models: Application of On-Wafer Cryogenic Noise Analysis and Improved Parameter Extraction Techniques

摘要

Significant advances in the development of HEMT technology have resulted in high performance cryogenic low noise amplifiers whose noise temperatures are within an order of magnitude of the quantum noise limit. Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques. Techniques and results are described.