Extraction of an avalanche diode noise model for its application as an on-wafer noise source

摘要

This paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on-wafer noise source. It is based on the determination of a broadband device noise circuit-model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz.