On-wafer, cryogenic characterization of ultra-low noise HEMT devices

摘要

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.