Etching Behavior of GaAs, GaSb, InAs,and InSb in Aqueous H_2O_2-HBr-Ethylene Glycol Solutions

摘要

The chemical interaction of GaAs, GaSb, InAs, and InSb single crystals with H_2O_2-HBr-ethyl-ene glycol bromine-releasing etchants has been studied under reproducible hydrodynamic conditions. We have located boundaries between regions of polishing and nonpolishing solutions, assessed the surface condition of the crystals using microstructural analysis and surface profiling, and optimized the compositions of the polishing solutions and dynamic chemical polishing conditions for the materials studied.