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Temperature Dependent Sellmeier Equations for III-V Semiconductors GaN, GaP, GaAs, GaSb, InAs and InSb

机译：III-V半导体的GaN，GaP，GaAs，GaSb，InAs和InSb的温度相关Sellmeier方程

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摘要

Recent measurement of refractive indices of binary III-V semiconductors GaN, GaP, GaAs, GaSb, InAs and InSb over temperature range of 77 – 400 K and wavelength range spanning the transmission window of each will be presented.

机译：展示了二进制III-V半导体GaN，间隙，GaAs，Gasb，InA和INSB的最新测量，在77-400k的温度范围内，跨越各自的波长范围。

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《Conference on Lasers and Electro-Optics 》|2020年|1-2|共2页
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Shekhar Guha; Jean Wei; Joel M. Murray;
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Refractive index; Temperature measurement; Gallium nitride; Gallium arsenide; Temperature dependence; Frequency conversion; Temperature distribution;

机译：折射率;温度测量;氮化镓;砷化镓;温度依赖性;频率转换;温度分布;

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专利

1. Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma [J] . HONG Ting, ZHANG Yong-gang, LIU Tian-dong 半导体光子学与技术（英文版） . 2004 ,第003期
2. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors [J] . Martin Gmitra, Jaroslav Fabian Physical Review. B, Condensed Matter . 2016 ,第16期

机译：GaAs，GaSb，InAs和InSb闪锌矿和纤锌矿半导体的轨道和自旋轨道特性的第一性原理研究
3. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors [J] . Gmitra Martin, Fabian Jaroslav Physical review, B . 2016 ,第16期

机译：GaAs，GaSb，InAs和InSb闪锌矿和纤锌矿半导体的轨道和自旋轨道特性的第一性原理研究
4. Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors [J] . Jing-Yang You, Bo Gu, Sadamichi Maekawa, Physical review.B.Condensed matter and materials physics . 2020 ,第9期

机译：Fe，Mn和Cr掺杂INSB，INAS和GASB磁半导体中的高温铁磁性的显微镜机理
5. Temperature dependent sellmeier equation for the refractive index of GaP [C] . Jean Wei, Joel M. Murray, Jacob O. Barnes, Conference on Lasers and Electro-Optics . 2017

机译：GaP折射率的温度相关Sellmeier方程
6. Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors [D] . Bhowmick, Mithun. 2012

机译：时间解析的in is和基于内部窄间隙半导体的光谱
7. Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires [O] . Ning Luo, Guang-Yao Huang, Gaohua Liao, -1

机译：InAs / GaSb和GaSb / InAs核-壳纳米线的能带反转间隙
8. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors [O] . Gmitra, Martin, Fabian, Jaroslav 2016

机译：Gaas轨道和自旋轨道特性的第一性原理研究， Gasb，Inas和Insb闪锌矿和纤锌矿半导体
9. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl3-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs; Applied Surface Science [R] . Abernathy, C. , Han, J. , Hobson, W. S. , 1998

机译：基于BCl3的化学中III-V半导体的电感耦合等离子体蚀刻：第1部分：Gaas，GaN，Gap，Gasb和alGaas;应用表面科学

Temperature Dependent Sellmeier Equations for III-V Semiconductors GaN, GaP, GaAs, GaSb, InAs and InSb

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