This disclosure involves a formula, mixing procedure, etching technique and application of an etchant for revealing defects in T2SL's grown lattice matched to (100) GaSb. The etching agent comprises a (2.5:4.5:16.5:280) solution by volume or (1%:2%:9%:88%) by weight, of HF:H2O2:H2SO4:H2O. The etchant is made by mixing (49%) hydrofluoric aqueous solution with (30%) water-based peroxide, followed by sulfuric acid, and diluted with de-ionized H2O (DI-water).
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机译：本公开涉及用于揭示与（100）GaSb匹配的T2SL的生长晶格中的缺陷的配方，混合步骤，蚀刻技术和蚀刻剂的应用。蚀刻剂包括按体积计（2.5：4.5：16.5：280）或按重量计（1％：2％：9％：88％）的HF：H 2 O 2 ：H 2 SO 4 ：H 2 O。通过将（49％）氢氟酸水溶液与（30％）水性过氧化物混合，然后加入硫酸，并用去离子水（DI-水）稀释，制成蚀刻剂。
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