Conventional techniques of joining silicon wafers to suitable substrates do not satisfy the demands of future power devices. Therefore, a low-temperature joining technique based on the principle of diffusion welding has been developed. The surfaces to be joined have to be metalized with Ag or Au. The molybdenum substrate is coated with a thin layer of silver flakes. Thereafter, the parts to be joined are sintered together at about 240 degrees C and a pressure of approximately 40 N/mm/sup 2/ for a few minutes. The joining technique does not affect the silicon wafer, and accordingly, is compatible with conventional power device and IC fabrication techniques. Both sides of the wafer can be joined with substrates even if IC structures are present. This possibility allows an increased surge current. Numerical calculations for different wafer thicknesses have been performed and compared with test devices. The technical usefulness has been proved by additional tests such as thermal cycling.
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机译：将硅晶片接合到合适的衬底的常规技术不能满足未来功率器件的需求。因此，已经开发了基于扩散焊接原理的低温接合技术。要连接的表面必须用Ag或Au金属化。钼基材上涂有一层薄薄的银薄片。此后，将要接合的零件在约240摄氏度和约40 N / mm / sup 2 /的压力下烧结几分钟。接合技术不影响硅晶片，因此与常规功率器件和IC制造技术兼容。即使存在IC结构，晶片的两面也可以与衬底接合。这种可能性允许增加浪涌电流。已经进行了不同晶片厚度的数值计算，并与测试设备进行了比较。通过其他测试（例如热循环）证明了该技术的实用性。
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