An FPGA-Based IGBT Behavioral Model With High Transient Resolution for Real-Time Simulation of Power Electronic Circuits

摘要

This paper presents a novel insulated gate bipolar transistor (IGBT) behavioral model on the field programmable gate array (FPGA), which is suitable for the real-time simulation of fast transients in power electronics circuits. In this model, the static and dynamic behaviors of the IGBT switch are described and modeled separately. The static IGBT model is represented by the saturation region of output characteristic and is a part of the circuit network model. The dynamic IGBT model is combined with the static one to describe the fast switching transient behaviors by using the IGBT equivalent circuit model. The presented dynamic model in this paper does not involve any iterative solving algorithm and can be designed with highly pipelined structures on FPGA. Therefore, the IGBT switching transient waveforms can be generated precisely with a 5 ns resolution. The proposed model is tested with two cases-a four-phase floating interleaved boost converter and a three-phase five-level modular multilevel converter. The effectiveness and accuracy of the model are validated by comparing the real-time simulation results with offline simulation software.