Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor

摘要

A complete analysis of Terahertz (THz) wave generation and detection of Silicon Nanowire MOS Field-Effect Transistor (SNFET) is presented in this paper. Based on the developed SNFET-THz device theory, the dependence of THz detection of SNFET on bias and structure parameters are obtained and illustrated. The numerical technique to solve fluid dynamic equation groups, which govern the THz wave transport in SNFET, is also introduced. Based on the developed numerical tool, the THz generation and its instability are demonstrated and analyzed in details. From developed numerical simulation program, the evolution processes of THz plasma wave in generation and detection modes are presented.