Formation of Reliable Pb (Ti, Zr)O_3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories

摘要

Recently, reliable Pb (Ti, Zr)O_3 (PZT) thin- film capacitors with robust switching endurance were fabricated successfully by incorporating oxidizable metal and oxide elec- trodes. However, the reasons for the drastic improvement in the switching endurance property was not clear. Degradation of polarizations by switching is called "polarization fatigue." This paper describes the mechanisms of polarization fatigue, and discusses ways for improving of that property from the stand- points of microstructure, and of interactions between the PZT and the electrode materials of the capacitors.