Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements

摘要

A novel method of extraction of emitter, R_e, and base, R_b, resistances of bipolar junction transistors, BJTs, Is proposed. R_e and R_b are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctua- tions, measured in the base and collector currents of the devices. Measurements carried out on quasi self aligned silicon BJTs show that R_e and R_b values obtained by the proposed method scale correctly with transistor dimensions and match the values esti- mated from the device layout.