A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements

摘要

A novel method of extraction of emitter and base resistances of bipolar junction transistors (BJTs) involving both static characteristics and low frequency noise data is proposed and tested on quasi-self-aligned BJTs. The method requires no special test structures and applies to transistors working in the normal operation regime. It may be therefore readily applied to test procedures for various types of BJTs.