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Low noise HF transistor oscillator - has transistor emitter-base junction shorted over noise frequency band of oscillating stage

机译:低噪声HF晶体管振荡器-晶体管的发射极-基极结在振荡级的噪声频带上短路

摘要

The low-noise HF transistor oscillator has the emitter/base junction of its oscillating transistor (Tr) short circuited by an appropriate impedance (L1, C1, C2, L2) overthe frequency band in which the noise component of the oscillating stage lies. The quartz crystal (K) is shunted by a capacitive voltage divider (C11, C12). An inductor (L1) in series with a capacitor (C1) shunts the crystal and divider and forms an audio frequency short circuit.
机译:低噪声HF晶体管振荡器的振荡晶体管(Tr)的发射极/基极结在振荡级噪声分量所在的频带上通过适当的阻抗(L1,C1,C2,L2)短路。石英晶体(K)被电容分压器(C11,C12)分流。与电容器(C1)串联的电感器(L1)分流晶体和分压器,并形成音频短路。

著录项

  • 公开/公告号DE2739057A1

    专利类型

  • 公开/公告日1979-03-15

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE19772739057

  • 发明设计人 FOERSTERHANS-JOACHIMING.;

    申请日1977-08-30

  • 分类号H03B5/36;

  • 国家 DE

  • 入库时间 2022-08-22 19:49:09

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