TaAl-Nを用いた薄膜マイクロ真空センサの開発

摘要

反応性スパッタ法により作製した高TCR（抵抗温度係数）のTaAl-N複合薄膜を用いた薄膜マイクロセンサを開発し、大気圧から10~(-4)Paまでの広い圧力領域で計測可能な真空計について製品化の可能性を確認した。本報告ではそれらの開発内容ならびにこれまで実現し得なかった新しい圧力計測システムへの可能性についても述べる。%The temperature dependence of the electrical resistivity of TaAl-N thin film was investigated and the characteristics of the thin film was applied to measure a pressure over a wide range in vacuum. The thin films, having been prepared by reacted DC magnetron sputtering method and deposited on the polyimide sheet, have characteristics that make them suitable for using as the thermo-conductive vacuum sensor; a large effective sensing area, a small heat capacity, and a large temperature coefficient of the resistivity (TCR) compared to a metal wire. The thin films was found sensitive to pressure change in the range of 100kPa to 10~(-4) Pa.