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机译:具有高K原子层沉积介电材料绝缘层的CMUT
G.W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA;
atomic layer deposition; capacitive sensors; electric breakdown; hafnium compounds; high-k dielectric thin films; insulating materials; micromachining; microsensors; permittivity; plasma CVD; silicon compounds; ALD materials; CMUT design; HfOsub2/sub; PECVD; Sisubx/subNsuby/sub; capacitive micromachined ultrasonic transducers; collapse voltage; dielectric constant; electrical breakdown strength; frequency 16.5 MHz; high-K atomic layer deposition dielectric material insulation layer; low-temperature complementary metal oxide semiconductor transistor-compatible sacrificial release method; parallel plate model; plasma-enhanced chemical vapor deposition; receiver output; size 100 nm; size 200 nm; transmit mode; vacuum gap thickness; Dielectric materials; Dielectrics; Electrostatics; Force; Hafnium oxide; Insulation;
机译:用于了解由原子层沉积沉积的高k介电材料进行动态随机存取存储器电容器应用的最新进展
机译:通过Al2O3种子层辅助高k电介质的原子层沉积性能提高单层MOS2晶体管
机译:使用原子层沉积法将AlO嵌入Al2O3高介电常数介质中的NiO层的非易失性存储效应
机译:原子层沉积沉积的高k介电材料的表面平滑和粗糙化效果及其在DRAM技术第二部分中使用的MIM电容器的意义
机译:通过原子层沉积进行金属栅/高k电介质堆叠工程:材料问题和电性能。
机译:具有高K原子层沉积介电材料绝缘层的CMUT
机译:具有高k原子层沉积介电材料绝缘层的CMUT