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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Design and application of the interlayer van der Pauw resistor alignment bridge
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Design and application of the interlayer van der Pauw resistor alignment bridge

机译:层间范德堡电阻对准桥的设计与应用

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The interlayer van der Pauw (VDP) resistor alignment bridge combines the sheet resistor and registration-sensitive bridge into one unified structure. As a result of symmetry, it does not require the width corrections resulting from image exposure and etch variations typical of linear resistor structures. It uses minimum area and pad count and provides orthogonal registration measurements. Bridges designed for 1.5- mu m feature size with body dimensions of 18 and 21 mu m and a tap length to width ratio of 0.5 show a sensitivity of 34-38 mV/ mu m at 10 mA. Registration errors of 0.2 mu m have been measured with an error of less than 10%. A good statistical correlation has been obtained between drawn and measured registration offsets. The correlation between the VDP bridge and the optical vernier is within +or-2% using a vernier spacing of 0.125 mu m. These results clearly indicate that the VDP bridge has the potential to provide accurate measurements of photo mask registration with the precision required for very large scale integration (VLSI) processing. The application of the VDP resistor bridge for interlayer registration using standard production procedures is described. Measurement precision and accuracy are discussed along with some fundamental bridge-design considerations.
机译:层间范德堡(VDP)电阻对准桥将薄层电阻和对位敏感桥组合为一个统一的结构。由于对称性,它不需要由图像曝光和线性电阻器结构典型的蚀刻变化引起的宽度校正。它使用最小的面积和焊盘数,并提供正交套准测量。专为1.5微米的特征尺寸而设计的桥体尺寸为18和21微米,抽头长宽比为0.5时,在10 mA时的灵敏度为34-38 mV /μm。测得的配准误差为0.2微米,误差小于10%。在绘制的和测量的配准偏移之间已获得良好的统计相关性。使用0.125微米的游标间距,VDP桥与光学游标之间的相关性在+或-2%之内。这些结果清楚地表明,VDP桥具有以非常大规模集成(VLSI)处理所需的精度提供光掩模配准的准确测量的潜力。描述了使用标准生产程序将VDP电阻桥用于层间配准的应用。讨论了测量精度和准确度以及一些基本的电桥设计注意事项。

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