机译:硅范德堡应力传感器的四线电桥测量
Electrical Engineering Department, Alabama Micro/Nano Science and Technology Center, Auburn University, Auburn, AL 36849;
Mechanical Engineering Department, Center for Advanced Vehicle and Extreme Environment Electronics (CAVE~3), Auburn University, Auburn, AL 36849;
Mechanical Engineering Department, Center for Advanced Vehicle and Extreme Environment Electronics (CAVE~3), Auburn University, Auburn, AL 36849;
Mechanical Engineering Department, Center for Advanced Vehicle and Extreme Environment Electronics (CAVE~3), Auburn University, Auburn, AL 36849;
stress sensor; piezoresistance; van der Pauw; pseudo Hall effect; Wheatstone bridge; (100) silicon; (111) silicon;
机译:勘误表:“硅范德堡应力传感器的四线电桥测量” [ASME J. Electron。包装,2014,136(4),p。 041014; DOI:10.1115 / 1.4028333
机译:在(111)硅上制造的范德堡(VDP)应力传感器中的应变效应
机译:在电子封装中的(111)硅上制造的范德堡(VDP)应力传感器中的应变效应
机译:(100)和(111)硅上的范德堡应力传感器的四线桥接测量
机译:Van der Pauw结构在压阻应力传感器中的应用
机译:用于范德堡磁传输测量的自由式GaMnAs纳米加工板
机译:van der pauw方法的锆二硼化物的升高电阻率测量