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A comparison of the optical projection lithography simulators in SAMPLE and PROLITH

机译:SAMPLE和PROLITH中的光学投影光刻模拟器的比较

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This paper documents important algorithmic details not available in the open literature, and illustrates differences and similarities between the SAMPLE and PROLITH programs using representative lithography systems as examples. Numerical comparisons demonstrate that the aerial images calculated by SAMPLE and PROLITH are in generally good agreement. At high numerical resolution, the programs provide the same qualitative lithographic information, including latent images and edge profile results; however, significant degradation occurs at lower restorations. Adequate results are obtained using a vertical resolution smaller than one-twentieth of the theoretical standing-wave wavelength. Significant disagreement is found in the output of the post-exposure bake algorithms where SAMPLE predicts much lower standing-wave amplitude attenuation effects.
机译:本文记录了公开文献中没有的重要算法细节,并以代表性光刻系统为例,说明了SAMPLE和PROLITH程序之间的异同。数值比较表明,由SAMPLE和PROLITH计算出的航拍图像总体上吻合良好。在高数字分辨率下,程序可提供相同的定性光刻信息,包括潜像和边缘轮廓结果。但是,较低的修复体会发生明显的退化。使用小于理论驻波波长的二十分之一的垂直分辨率可以获得足够的结果。在曝光后烘烤算法的输出中发现了明显的分歧,其中SAMPLE预测了更低的驻波幅度衰减效应。

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