Application of CMP process monitor to Cu polishing

摘要

We have developed a chemical mechanical polishing (CMP) processnmonitor which uses polishing vibration. The monitor enables us tonaccurately detect the polishing end point in copper (Cu) polishing evennwhen the process conditions such as initial film thickness, slurry flownand polishing rate are changed and when polishing multilayer film.nFurthermore, the monitor is not only applicable to Cu polishing but alsonto planarizing polishing of an inter-level dielectric layer. The monitorncan be also used to control the processes and the equipment because ofnits capability to detect abnormalities in the polishing conditions