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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Compensator control for chemical vapor deposition film growth usingreduced-order design models
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Compensator control for chemical vapor deposition film growth usingreduced-order design models

机译:使用降序设计模型的化学气相沉积膜生长补偿器控制

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摘要

We present a summary of investigations on the use of propernorthogonal decomposition techniques as a reduced basis method forncomputation of feedback controls and compensators in a high-pressurenchemical vapor deposition (HPCVD) reactor. These investigationsnincorporate multiple species and controls, gas phase reactions, and timendependent tracking signals that are consistent with pulsed vapornreactant inputs. Numerical implementation of the model-based feedbackncontrol uses a reduced-order state estimator, based on partial statenobservations of the fluxes of reactants at the substrate center, whichncan be achieved with current sensing technology. We demonstrate that thenreduced-order state estimator or compensator system is capable ofnsubstantial control authority when applied to the full system
机译:我们提供有关使用适当的正交分解技术作为高压化学气相沉积(HPCVD)反应器中的反馈控制和补偿器计算的简化基础方法的研究摘要。这些研究并入了多种物质和控制,气相反应以及与时间相关的跟踪信号,这些信号与脉冲气态反应物输入相一致。基于模型的反馈控制的数值实现基于基体中心反应物通量的部分状态观测,使用降阶状态估计器,这可以通过电流传感技术实现。我们证明了降阶状态估计器或补偿器系统在应用于整个系统时具有实质的控制权

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