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Fault-tolerance considerations for redundant binary-tree-dynamic random-access-memory (RAM) chips

机译:冗余二叉树动态随机存取存储器(RAM)芯片的容错注意事项

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The binary-tree-dynamic RAM (TRAM) architecture has been proposed to overcome the performance and testing time limits of the traditional architecture of memory chips. A 64-Mb prototype of this architecture is being built. The author investigates manufacturing yield and operational performance of redundant TRAMs with respect to variation of tree depth and redundancy level. For this purpose, a based chip area, a yield and operational performance figure of merit allowing the comparison of various choices, has been formulated and used. The yield is evaluated by a new Markov-chain-based model. The memory operational performance has been analyzed by an innovative technique that substitutes the notion of chip state at the end of the mission time with the cumulative work performed by the chip during the mission time (performability). Optimum values of three tree depth and redundancy level were found for a given RAM size, the adopted reconfiguration strategy, and the kinds of redundancy.
机译:已经提出了二进制树动态RAM(TRAM)架构,以克服传统存储芯片架构的性能和测试时间限制。正在构建此架构的64 Mb原型。作者研究了冗余TRAM的制造良率和操作性能,并涉及了树深和冗余级别的变化。为此目的,已经制定并使用了基于芯片的面积,良率和操作性能指标,可以比较各种选择。通过基于新马尔可夫链的模型评估产量。存储器的运行性能已通过一种创新技术进行了分析,该技术将任务时间结束时的芯片状态概念替换为任务时间中芯片执行的累积功(性能)。对于给定的RAM大小,采用的重新配置策略以及冗余的种类,找到了三个树深度和冗余级别的最佳值。

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