Accurate SPICE Modeling of Reverse-Conducting IGBTs Including Self-Heating Effects

摘要

In this paper, a temperature-dependent compact SPICE model of reverse-conducting IGBTs (RC-IGBTs) is presented. The proposed solution is based on a quasi-two-dimensional (2-D) approach, with the use of IGBT and p-i-n diode subcircuits suitably connected to take into account the inner interactions among the two devices. The resulting device model is derived through physical considerations on the RC-IGBT internal behavior, carried out by means of wide area TCAD 2-D simulations. Transversal current path, localized lifetime control effects, and turn-on dynamics are also included into the model. The model shows good robustness properties, even in demanding numerical conditions. Validation of the SPICE model with experiments performed on a 1.2-kV 30-A commercial device, in both static and dynamic conditions, demonstrates its remarkable correctness and accuracy. To further confirm the applicability of the proposed model in real-operating conditions, a quasi-resonant converter has been realized and the measurements on the realized circuit have been successfully compared with the results obtained with the proposed model.